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MPSA05G

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MPSA05G

TRANS NPN 60V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MPSA05G, a bipolar junction transistor, features an NPN configuration with a maximum collector-emitter voltage of 60V and a continuous collector current of 500mA. This through-hole component, housed in a TO-92 (TO-226) package, offers a transition frequency of 100MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is a minimum of 100 at 100mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce) is 250mV maximum at 10mA base current and 100mA collector current. With a collector cutoff current of 100nA and an operating temperature range from -55°C to 150°C, this device is suitable for applications in general-purpose switching and amplification within industrial and consumer electronics. The component is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition100MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max625 mW

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