MPS918
TRANS NPN 15V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS918, an NPN bipolar junction transistor, offers a collector-emitter breakdown voltage of 15V and a continuous collector current capability of 50mA. This through-hole component features a transition frequency of 600MHz and a maximum power dissipation of 350mW. The DC current gain (hFE) is specified as a minimum of 20 at 3mA collector current and 10V collector-emitter voltage. Saturation characteristics include a Vce(sat) of 400mV at 1mA base current and 10mA collector current. The collector cutoff current (ICBO) is a maximum of 50nA. Packaged in a TO-92 (TO-226) form factor, the MPS918 is suitable for general-purpose amplification and switching applications across various industrial and consumer electronics sectors. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA, 10V |
| Frequency - Transition | 600MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 350 mW |
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