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MPS8099RLRM

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MPS8099RLRM

TRANS NPN 80V 0.5A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MPS8099RLRM is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. The MPS8099RLRM offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage, with a transition frequency of 150MHz. Its Vce(sat) is specified at a maximum of 400mV for 5mA base current and 100mA collector current. The component dissipates a maximum power of 625mW and operates within a temperature range of -55°C to 150°C. Packaged in a TO-92 (TO-226) through-hole configuration, the MPS8099RLRM is supplied in Tape & Box packaging. This transistor is commonly utilized in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Frequency - Transition150MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max625 mW

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