MPS8099RLRM
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS8099RLRM is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 500mA. The MPS8099RLRM offers a minimum DC current gain (hFE) of 100 at 1mA collector current and 5V collector-emitter voltage, with a transition frequency of 150MHz. Its Vce(sat) is specified at a maximum of 400mV for 5mA base current and 100mA collector current. The component dissipates a maximum power of 625mW and operates within a temperature range of -55°C to 150°C. Packaged in a TO-92 (TO-226) through-hole configuration, the MPS8099RLRM is supplied in Tape & Box packaging. This transistor is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |