MPS8099G
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi MPS8099G is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce(max)) of 80 V. The transition frequency (Ft) is specified at 150 MHz, with a minimum DC current gain (hFE) of 100 at 1 mA collector current and 5 V collector-emitter voltage. Power dissipation is rated at 625 mW. The MPS8099G is supplied in a TO-92 (TO-226) through-hole package, suitable for mounting on printed circuit boards. Typical applications include voltage regulation, switching circuits, and audio amplification across various industrial and consumer electronics sectors. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
Request a Quote
Clients Also Buy
MJE200STU
TRANS NPN 25V 5A TO126-3
MMBT2907-D87Z
TRANS PNP 40V 0.8A SOT23-3
SMMBTA42LT3G
TRANS NPN 300V 0.5A SOT23-3
