MPS751G
TRANS PNP 60V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS751G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 2A. With a transition frequency of 75MHz and a power dissipation of 625mW, the MPS751G is suitable for use in consumer electronics, industrial control systems, and automotive applications. It offers a minimum DC current gain (hFE) of 75 at 1A and 2V, with a specified Vce(sat) of 500mV at 200mA and 2A. The transistor is packaged in a TO-92 (TO-226) through-hole package, facilitating easy board mounting. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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