MPS750G
TRANS PNP 40V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS750G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 2A. With a transition frequency of 75MHz and a maximum power dissipation of 625mW, the MPS750G is suitable for use in power management, industrial control, and consumer electronics. The device offers a minimum DC current gain (hFE) of 75 at 1A collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 500mV for an operating point of 200mA base current and 2A collector current. The MPS750G is supplied in a TO-92 (TO-226) package, facilitating through-hole mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |