MPS750
TRANS PNP 40V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS750 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 2A. With a transition frequency of 75MHz, it is suitable for moderate-frequency operations. The DC current gain (hFE) is specified at a minimum of 75 at 1A collector current and 2V Vce. The device exhibits a Vce(sat) of 500mV at 200mA base current and 2A collector current. The power dissipation is rated at 625mW. The MPS750 is housed in a TO-92 (TO-226) through-hole package and operates within an industrial temperature range of -55°C to 150°C. It finds application in various electronic systems including power supplies, audio amplifiers, and switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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