MPS6729G
TRANS PNP 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS6729G, a PNP bipolar junction transistor, offers robust performance with a 80V collector-emitter breakdown voltage. This through-hole component, housed in a TO-92 (TO-226) package, handles a maximum collector current of 500mA and a power dissipation of 1W. Key electrical characteristics include a minimum DC current gain (hFE) of 50 at 250mA and 1V, and a Vce saturation voltage of 500mV at 10mA collector current and 250mA base current. The collector cutoff current (ICBO) is specified at a maximum of 100nA. Operating across a wide temperature range from -55°C to 150°C, this device is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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