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MPS6727G

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MPS6727G

TRANS PNP 40V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi's MPS6727G is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1A, with a maximum power dissipation of 1W. The DC current gain (hFE) is a minimum of 50 at 1A collector current and 1V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 500mV with 100mA base current and 1A collector current. The transistor features a low collector cutoff current (ICBO) of 100nA. Housed in a TO-92 (TO-226) through-hole package, the MPS6727G operates across a wide temperature range of -55°C to 150°C, making it suitable for demanding environments in industries such as industrial control and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1A, 1V
Frequency - Transition-
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max1 W

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