MPS6725RLRP
TRANS NPN DARL 50V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS6725RLRP is an NPN Darlington bipolar junction transistor designed for high gain applications. This component features a 50V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a transition frequency of 1GHz and a maximum power dissipation of 1W, it is suitable for demanding switching and amplification tasks. The DC current gain (hFE) is a minimum of 4000 at 1A collector current and 5V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 1.5V for a 2mA base current and 1A collector current. The device operates within a temperature range of -55°C to 150°C. Packaged in a TO-92 (TO-226) case with formed leads, the MPS6725RLRP is supplied in Tape & Box packaging. This transistor finds utility in various industrial and consumer electronics sectors, including power management and control circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1A, 5V |
| Frequency - Transition | 1GHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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