MPS6725G
TRANS NPN DARL 50V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS6725G is an NPN Darlington bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage (Vce(max)) of 50V and a continuous collector current (Ic(max)) of 1A. It features a high DC current gain (hFE) of 4000 minimum at 1A and 5V, coupled with a transition frequency (fT) of 1GHz. The MPS6725G is packaged in a TO-92 (TO-226) through-hole package, suitable for applications in industrial control, consumer electronics, and lighting. The maximum power dissipation is 1W, with a Vce(sat) of 1.5V at 2mA base current and 1A collector current. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 2mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 4000 @ 1A, 5V |
| Frequency - Transition | 1GHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |
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