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MPS6724G

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MPS6724G

TRANS NPN DARL 40V 1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPS6724G is an NPN Darlington bipolar junction transistor designed for robust performance in demanding applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a 40V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a high DC current gain (hFE) of 4000 at 1A and 5V, coupled with a transition frequency of 1GHz. The device exhibits a collector-emitter saturation voltage (Vce(sat)) of 1.5V at 2mA base current and 1A collector current, with a collector cutoff current (ICBO) of 100nA. With a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C, the MPS6724G is suitable for use in industrial and consumer electronics where high gain and switching capability are required.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 2mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce4000 @ 1A, 5V
Frequency - Transition1GHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max1 W

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