MPS6717RLRA
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS6717RLRA is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 500 mA, with a maximum power dissipation of 1 W. The MPS6717RLRA exhibits a minimum DC current gain (hFE) of 50 at 250 mA and 1 V. Its saturation voltage (Vce Sat) is specified at a maximum of 500 mV at 10 mA base current and 250 mA collector current. The transistor is housed in a TO-92 (TO-226) package with formed leads, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C. This component finds utility in various industrial and consumer electronics sectors. The MPS6717RLRA is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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