MPS6717G
TRANS NPN 80V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS6717G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-92 (TO-226) case, offers a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage (Vce(max)) of 80 V. With a power dissipation of 1 W, it exhibits a minimum DC current gain (hFE) of 50 at 250 mA and 1 V. The saturation voltage (Vce(sat)) is 500 mV at 10 mA and 250 mA. It is suitable for operation across a temperature range of -55°C to 150°C. The MPS6717G finds utility in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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