MPS6601G
TRANS NPN 25V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS6601G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 25V collector-emitter breakdown voltage and a continuous collector current capability of 1A. The transition frequency is rated at 100MHz, and it offers a minimum DC current gain (hFE) of 50 at 500mA and 1V. The maximum power dissipation is 625mW. It is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. Typical applications include consumer electronics and industrial control systems. The collector cutoff current is a maximum of 100nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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