MPS6601
TRANS NPN 25V 1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS6601 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in a TO-92 (TO-226) package, offers a collector-emitter breakdown voltage of 25V and a continuous collector current capability of up to 1A. It features a maximum power dissipation of 625mW and a transition frequency of 100MHz. The DC current gain (hFE) is specified at a minimum of 50 at 500mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 600mV at 100mA base current and 1A collector current. The operating temperature range is from -55°C to 150°C. This component finds utility in various industrial and consumer electronics, including power supply regulation and signal switching circuits.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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