MPS6561
TRANS NPN 20V 0.6A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS6561 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 20V and a continuous collector current capability of up to 600mA. With a transition frequency of 60MHz, it is suitable for moderate frequency circuits. The MPS6561 offers a minimum DC current gain (hFE) of 50 at 350mA and 1V, and a saturation voltage (Vce(sat)) of 500mV at 35mA collector current and 350mA base current. It is packaged in a standard TO-92-3 (TO-226-3) through-hole package, providing a power dissipation of 625mW. This transistor finds application in consumer electronics, industrial control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 35mA, 350mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 350mA, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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