MPS6560G
TRANS NPN 25V 0.5A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS6560G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 25V and a maximum continuous collector current (Ic) of 500mA. With a transition frequency (fT) of 60MHz and a maximum power dissipation of 625mW, it offers reliable performance in moderate power handling scenarios. The DC current gain (hFE) is specified at a minimum of 50 at 500mA and 1V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 50mA base current and 500mA collector current. Packaged in a TO-92 (TO-226) through-hole configuration, the MPS6560G is suitable for use in industrial, consumer electronics, and telecommunications equipment. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 1V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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