MPS6523G
TRANS PNP 25V 0.1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS6523G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 25V collector-emitter breakdown voltage and a maximum continuous collector current of 100 mA. With a power dissipation rating of 625 mW, it is suitable for applications requiring moderate power handling. The DC current gain (hFE) is specified at a minimum of 300 at 2 mA collector current and 10V collector-emitter voltage. The transistor exhibits a saturation voltage (Vce(sat)) of 500 mV at 5 mA base current and 50 mA collector current. The collector cutoff current (ICBO) is a maximum of 50 nA. Supplied in a TO-92 (TO-226) package, the MPS6523G is intended for through-hole mounting and operates within an ambient temperature range of -55°C to 150°C. This device finds utility in various industrial, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 2mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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