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MPS6521G

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MPS6521G

TRANS NPN 25V 0.1A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPS6521G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a 25V collector-emitter breakdown voltage and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 300 at 2mA collector current and 10V collector-emitter voltage. The transistor has a maximum power dissipation of 625mW and a Vce saturation of 500mV at 5mA base current and 50mA collector current. The device operates within a temperature range of -55°C to 150°C and is supplied in a TO-92 (TO-226) through-hole package. Typical applications include consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 2mA, 10V
Frequency - Transition-
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max625 mW

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