MPS651RLRA
TRANS NPN 60V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS651RLRA is an NPN bipolar junction transistor (BJT). This through-hole component, packaged in a TO-92 (TO-226) case, offers a collector-emitter breakdown voltage of 60 V and a continuous collector current capability of up to 2 A. It features a transition frequency of 75 MHz and a maximum power dissipation of 625 mW. The minimum DC current gain (hFE) is specified at 75 at 1 A collector current and 2 V collector-emitter voltage. Collector cutoff current (ICBO) is rated at a maximum of 100 nA. Saturation voltage (Vce(sat)) is a maximum of 500 mV at 200 mA base current and 2 A collector current. This device is suitable for applications in general-purpose amplification and switching across various industrial sectors. The MPS651RLRA is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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