MPS651G
TRANS NPN 60V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
The onsemi MPS651G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in a standard TO-92 (TO-226) case, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 2A. With a transition frequency of 75MHz and a power dissipation rating of 625mW, it is suitable for use in a variety of industrial and consumer electronics, including power supply regulation and audio amplification circuits. The device exhibits a minimum DC current gain (hFE) of 75 at 1A collector current and 2V collector-emitter voltage, with a Vce(sat) of 500mV at 200mA collector current and 2A collector current. The collector cutoff current (ICBO) is a maximum of 100nA. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
Request a Quote
Clients Also Buy
MJE200STU
TRANS NPN 25V 5A TO126-3
MMBT2907-D87Z
TRANS PNP 40V 0.8A SOT23-3
SMMBTA42LT3G
TRANS NPN 300V 0.5A SOT23-3
