MPS6515
TRANS NPN 25V 0.2A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS6515 is a general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of applications. This component features a 25V collector-emitter breakdown voltage and a maximum collector current of 200 mA. The MPS6515 offers a minimum DC current gain (hFE) of 250 at 2mA collector current and 10V collector-emitter voltage. With a maximum power dissipation of 625 mW, it is suitable for use in consumer electronics, industrial control systems, and automotive applications. The device is supplied in a TO-92-3 package, facilitating through-hole mounting. Its Vce saturation is specified at a maximum of 500mV at 5mA base current and 50mA collector current. The collector cutoff current (ICBO) is a maximum of 50nA. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 2mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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