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MPS650ZL1G

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MPS650ZL1G

TRANS NPN 40V 2A TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPS650ZL1G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 2A. It features a transition frequency of 75MHz and a maximum power dissipation of 625mW. The DC current gain (hFE) is specified at a minimum of 75 at 1A and 2V. The saturation voltage (Vce) is a maximum of 500mV at 200mA collector current and 2A collector current. Packaged in a TO-92 (TO-226) through-hole configuration, the MPS650ZL1G is suitable for use in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body, Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 1A, 2V
Frequency - Transition75MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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