MPS650ZL1
TRANS NPN 40V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor (BJT), part number MPS650ZL1. This through-hole device features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 2A. With a transition frequency of 75MHz and a maximum power dissipation of 625mW, it offers a minimum DC current gain (hFE) of 75 at 1A collector current and 2V collector-emitter voltage. The saturation voltage (Vce(sat)) is 500mV at 200mA base current and 2A collector current. The device is housed in a TO-92 (TO-226) package and is suitable for applications in consumer electronics and industrial control systems. The collector cutoff current (ICBO) is rated at 100nA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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