MPS650G
TRANS NPN 40V 2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS650G is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 2A, making it suitable for moderate power handling. The MPS650G exhibits a minimum DC current gain (hFE) of 75 at 1A collector current and 2V collector-emitter voltage, with a transition frequency of 75MHz. Its saturation voltage (Vce Sat) is specified at a maximum of 500mV with 200mA base current and 2A collector current. The transistor is packaged in a standard TO-92 (TO-226) through-hole package, facilitating straightforward assembly in printed circuit boards. Operating temperature ranges from -55°C to 150°C (TJ). This device finds utility in various industrial and consumer electronics, including power supply circuits, signal amplification stages, and control circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Frequency - Transition | 75MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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