MPS5172G
TRANS NPN 25V 0.1A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS5172G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 25V and a maximum continuous collector current of 100mA. The MPS5172G offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 10V collector-emitter voltage. Its saturation voltage (Vce(sat)) is specified at a maximum of 250mV for a base current of 1mA and a collector current of 10mA. With a maximum power dissipation of 625mW, the transistor is housed in a TO-92 (TO-226) package, suitable for through-hole mounting. The operating temperature range is from -55°C to 150°C. This component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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