MPS4250G
TRANS PNP 40V 0.05A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS4250G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage (Vce(max)) of 40V and a continuous collector current (Ic(max)) of 50mA. It offers a minimum DC current gain (hFE) of 250 at 10mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 250mV at 500µA base current and 10mA collector current. With a maximum power dissipation of 625mW, it is housed in a TO-92 (TO-226) through-hole package. The MPS4250G finds utility in various industrial and consumer electronics, including audio amplification circuits and low-power switching applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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