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MPS3563G

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MPS3563G

TRANS NPN 12V 1.5GHZ TO92

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MPS3563G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. With a transition frequency of 600MHz, it is suitable for high-frequency circuits. The device is packaged in a TO-92 (TO-226) through-hole configuration, offering a maximum power dissipation of 350mW. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 8mA and 10V, and a collector cutoff current (ICBO) of 10nA (max). The MPS3563G operates across a temperature range of -55°C to 150°C. This transistor finds application in consumer electronics, industrial controls, and telecommunications equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V
Frequency - Transition600MHz
Supplier Device PackageTO-92 (TO-226)
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)12 V
Power - Max350 mW

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