MPS3563
TRANS NPN 12V 1.5GHZ TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MPS3563 is a bipolar junction transistor (BJT) with an NPN configuration. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. Its transition frequency is specified at 600MHz, making it suitable for high-frequency applications. The MPS3563 is supplied in a TO-226 (TO-92) through-hole package, designed for ease of board mounting. Key parameters include a maximum power dissipation of 350mW and a collector cutoff current of 10nA (ICBO). The DC current gain (hFE) is a minimum of 20 at 8mA collector current and 10V collector-emitter voltage. Operating temperature ranges from -55°C to 150°C. This device finds application in various electronic circuits, including RF amplification and switching stages within telecommunications and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V |
| Frequency - Transition | 600MHz |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 350 mW |
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