MPS2369G
TRANS NPN 15V 0.2A TO92Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MPS2369G is an NPN Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 15 V and a maximum continuous collector current (Ic) of 200 mA. The device offers a minimum DC current gain (hFE) of 40 at 10 mA collector current and 1 V collector-emitter voltage. With a maximum power dissipation of 625 mW, the MPS2369G is suitable for operation across a wide temperature range of -55°C to 150°C. The transistor is housed in a TO-92 (TO-226) package, facilitating through-hole mounting. Saturation voltage (Vce(sat)) is specified at 250 mV maximum for a base current (Ib) of 1 mA and collector current (Ic) of 10 mA. This component finds utility in various industrial and consumer electronics, including power supply circuits and signal conditioning.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 (TO-226) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 625 mW |
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