MMJT9435T3G
TRANS PNP 30V 3A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMJT9435T3G PNP Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This device offers a 30V collector-emitter breakdown voltage and a continuous collector current capability of 3A, dissipating up to 3W. Key specifications include a minimum DC current gain (hFE) of 125 at 800mA and 1V, and a transition frequency of 110MHz. The transistor type is PNP, and it features a Vce saturation of 550mV at 300mA and 3A. Housed in a convenient SOT-223 (TO-261) surface-mount package, it operates within a temperature range of -55°C to 150°C. This component is suitable for use in various industrial and consumer electronics sectors. The MMJT9435T3G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA, 1V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 3 W |
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