MMJT9435T3
TRANS PNP 30V 3A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMJT9435T3 is a PNP bipolar junction transistor designed for demanding applications. This device features a 30V collector-emitter breakdown voltage and a continuous collector current capability of 3A. With a maximum power dissipation of 3W and a transition frequency of 110MHz, it is suitable for various switching and amplification tasks. The DC current gain (hFE) is a minimum of 125 at 800mA collector current and 1V collector-emitter voltage, with a Vce saturation of 550mV at 300mA base current and 3A collector current. The MMJT9435T3 is housed in a SOT-223 (TO-261) surface mount package, delivered on tape and reel. Operating temperature ranges from -55°C to 150°C (TJ). This component finds utility in industrial control, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA, 1V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 3 W |
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