MMJT9435T1G
TRANS PNP 30V 3A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMJT9435T1G is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a 30V collector-emitter breakdown voltage and a continuous collector current capability of up to 3A. The maximum power dissipation is 3W. With a transition frequency of 110MHz, it is suitable for a range of signal processing tasks. The DC current gain (hFE) is a minimum of 125 at 800mA collector current and 1V collector-emitter voltage. The transistor exhibits a Vce(sat) of 550mV at 300mA collector current and 3A base current. It is packaged in a SOT-223 (TO-261) surface mount package, supplied on tape and reel. This component is commonly utilized in industrial control, consumer electronics, and power management circuits. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 550mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 800mA, 1V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 3 W |
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