MMJT9410T1G
TRANS NPN 30V 3A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMJT9410T1G is a high-performance NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 3A, with a power dissipation capability of 3W. The MMJT9410T1G exhibits a minimum DC current gain (hFE) of 85 at 800mA and 1V, and a transition frequency of 72MHz. It is supplied in a SOT-223 (TO-261) surface mount package, ideal for high-density board designs. Saturation voltage is specified as 450mV at 300mA and 3A. This component is commonly utilized in power management, general-purpose amplification, and switching circuits across various industrial and consumer electronics sectors. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 800mA, 1V |
| Frequency - Transition | 72MHz |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 3 W |
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