MMJT350T1
TRANS PNP 300V 0.5A SOT223Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMJT350T1 is a PNP bipolar junction transistor (BJT) designed for demanding applications. Featuring a high collector-emitter breakdown voltage of 300V and a continuous collector current capability of 500mA, this device is suitable for power switching and amplification circuits. The MMJT350T1 offers a maximum power dissipation of 2.75W and a DC current gain (hFE) of at least 30 at 50mA collector current and 10V collector-emitter voltage. Its SOT-223 (TO-261) surface mount package ensures efficient thermal management and compact board design. Operating across a wide temperature range of -55°C to 150°C, this transistor finds utility in industrial control, power supply, and lighting systems. The component is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-223 (TO-261) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2.75 W |
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