MMBTA93LT1G
TRANS PNP 200V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBTA93LT1G is a PNP bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 200V and a continuous collector current capability of 500mA. It features a transition frequency of 50MHz and a maximum power dissipation of 300mW. The DC current gain (hFE) is a minimum of 25 at 30mA collector current and 10V collector-emitter voltage. Collector cutoff current (ICBO) is specified at a maximum of 250nA. The saturation voltage (Vce(sat)) is a maximum of 500mV at 2mA base current and 20mA collector current. Packaged in a SOT-23-3 (TO-236) surface mount configuration, supplied on tape and reel, this transistor is suitable for use in industrial and consumer electronics. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 250nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 300 mW |
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