MMBTA93LT1
TRANS PNP 200V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBTA93LT1 is a PNP bipolar junction transistor designed for high voltage applications. This surface-mount device, housed in a SOT-23-3 (TO-236) package, offers a maximum collector-emitter breakdown voltage of 200V and a continuous collector current capability of 500mA. It features a transition frequency of 50MHz and a maximum power dissipation of 300mW. Key parameters include a minimum DC current gain (hFE) of 25 at 30mA and 10V, and a collector cutoff current (ICBO) of 250nA. The saturation voltage (Vce Sat) is specified at a maximum of 500mV for 2mA base current and 20mA collector current. The MMBTA93LT1 is suitable for use in industrial, consumer electronics, and telecommunications equipment requiring robust voltage handling in a compact form factor. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 250nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 300 mW |
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