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MMBTA70LT1G

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MMBTA70LT1G

TRANS PNP 40V 0.1A SOT23-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MMBTA70LT1G is a PNP bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 40 at 5mA collector current and 10V Vce. With a transition frequency of 125MHz and a maximum power dissipation of 225mW, it is suitable for general-purpose amplification and switching. The SOT-23-3 (TO-236) package facilitates automated assembly. The operating temperature range is -55°C to 150°C. Applications include consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 5mA, 10V
Frequency - Transition125MHz
Supplier Device PackageSOT-23-3 (TO-236)
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max225 mW

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