MMBTA70LT1
TRANS PNP 40V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBTA70LT1 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 125MHz and a power dissipation of 225mW, it is suitable for general-purpose amplification and switching. Key specifications include a minimum DC current gain (hFE) of 40 at 5mA collector current and 10V collector-emitter voltage, and a saturation voltage (Vce (sat)) not exceeding 250mV at 1mA base current and 10mA collector current. The transistor is packaged in a SOT-23-3 (TO-236) surface mount case, supplied on tape and reel. Its operating temperature range is -55°C to 150°C. This device finds application in various electronic circuits, including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5mA, 10V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 225 mW |
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