MMBTA43LT1G
TRANS NPN 200V 0.05A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBTA43LT1G is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 200V and a continuous collector current capability of 50mA. The transistor exhibits a minimum DC current gain (hFE) of 40 at 30mA and 10V, with a transition frequency of 50MHz. Maximum power dissipation is rated at 225mW. The device operates within a junction temperature range of -55°C to 150°C. Packaged in a SOT-23-3 (TO-236) surface mount case, the MMBTA43LT1G is commonly utilized in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 225 mW |
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