MMBTA20LT1G
TRANS NPN 40V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBTA20LT1G is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 40V and a continuous collector current (Ic) capability of 100mA. The minimum DC current gain (hFE) is 40 at 5mA collector current and 10V Vce. With a transition frequency (fT) of 125MHz, it is suitable for moderate frequency circuits. The transistor is packaged in a SOT-23-3 (TO-236) surface-mount configuration, offering a maximum power dissipation of 225mW. Operating temperature range is from -55°C to 150°C. This component finds use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5mA, 10V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 225 mW |
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