MMBTA05LT3
TRANS NPN 60V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBTA05LT3 is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a maximum collector-emitter voltage (Vce) of 60V and a continuous collector current (Ic) capability of 500mA. Designed for surface mounting within the SOT-23-3 (TO-236) package, it dissipates a maximum power of 225 mW. Key electrical specifications include a transition frequency (fT) of 100MHz and a minimum DC current gain (hFE) of 100 at 100mA and 1V. The collector cutoff current (Icbo) is a maximum of 100nA, and the Vce (sat) is a maximum of 250mV at 10mA base current and 100mA collector current. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in general-purpose amplification and switching applications across various industrial electronics sectors. The part is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 225 mW |
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