MMBT6589T1G
TRANS PNP 30V 1A 6TSOPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT6589T1G is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 1A. Featuring a transition frequency of 100MHz, it is suitable for amplification and switching functions in various electronic systems. The device dissipates a maximum power of 540mW and operates within an ambient temperature range of -55°C to 150°C. It is supplied in a 6-TSOP package, presented on tape and reel for automated assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 500mA and 2V, and a maximum collector cutoff current of 100nA. The saturation voltage (Vce(sat)) is specified at 650mV at 200mA and 2A. This transistor finds application in telecommunications, industrial control, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 6-TSOP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 540 mW |
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