MMBT6521LT1
TRANS NPN 25V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT6521LT1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 25V and a continuous collector current capability of 100mA. With a maximum power dissipation of 225mW, it is suitable for compact board designs. The device exhibits a minimum DC current gain (hFE) of 300 at 2mA collector current and 10V collector-emitter voltage, and a Vce(sat) of 500mV at 5mA base current and 50mA collector current. Packaged in a SOT-23-3 (TO-236) surface-mount configuration, the MMBT6521LT1 is supplied on tape and reel. Typical applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 2mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 225 mW |
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