MMBT6520LT3
TRANS PNP 350V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT6520LT3 is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a 350V collector-emitter breakdown voltage and a continuous collector current capability of 500mA. It features a transition frequency of 200MHz and a maximum power dissipation of 225mW. The MMBT6520LT3 exhibits a minimum DC current gain (hFE) of 20 at 50mA and 10V. Collector cutoff current is specified at a maximum of 50nA (ICBO). Saturation voltage (Vce) is a maximum of 1V at 5mA base current and 50mA collector current. The device is supplied in a SOT-23-3 (TO-236) package, delivered on tape and reel. This transistor is utilized in various industrial applications requiring high voltage switching and amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 225 mW |
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