MMBT6517LT3G
TRANS NPN 350V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, part number MMBT6517LT3G. This surface-mount device, housed in a SOT-23-3 (TO-236) package, features a 350 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. It offers a transition frequency of 200 MHz and a maximum power dissipation of 225 mW. Key parameters include a minimum DC current gain (hFE) of 20 at 50 mA and 10 V, and a collector cutoff current (ICBO) of 50 nA. The saturation voltage (Vce Saturation) at 50 mA collector current and 5 mA base current is 1 V. The operating temperature range is from -55°C to 150°C. This component is commonly utilized in industrial, automotive, and consumer electronics applications requiring high voltage switching and amplification. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 225 mW |
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