MMBT6517LT3
TRANS NPN 350V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi NPN Bipolar Junction Transistor, MMBT6517LT3. This surface mount device features a 350V collector-emitter breakdown voltage and a 100mA maximum collector current. The transistor offers a 200MHz transition frequency and a maximum power dissipation of 225mW. Key specifications include a minimum DC current gain (hFE) of 20 at 50mA collector current and 10V Vce, and a Vce(sat) of 1V at 5mA base current and 50mA collector current. The SOT-23-3 (TO-236) package is supplied on tape and reel. This component is suitable for applications in power management and general-purpose switching within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 225 mW |
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