MMBT6517LT1G
TRANS NPN 350V 0.1A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MMBT6517LT1G is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a high collector-emitter breakdown voltage of 350V and a maximum collector current of 100mA. With a transition frequency of 200MHz, it is suitable for various general-purpose switching and amplification tasks. The device dissipates a maximum power of 225mW and is housed in a compact SOT-23-3 (TO-236) package, supplied on tape and reel. Key electrical characteristics include a saturation voltage (Vce(sat)) of 1V at 5mA base current and 50mA collector current, and a DC current gain (hFE) of at least 20 at 50mA collector current and 10V collector-emitter voltage. The operating temperature range is from -55°C to 150°C. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 225 mW |
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