MMBT6429LT1
TRANS SS NPN 45V LN SOT23Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MMBT6429LT1 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This surface-mount device, housed in a SOT-23-3 (TO-236) package, offers a collector-emitter breakdown voltage of 45 V and a continuous collector current capability of up to 200 mA. Its high transition frequency of 700 MHz makes it suitable for moderate frequency signal processing. The device exhibits a minimum DC current gain (hFE) of 500 at 100µA and 5V, with a maximum collector-emitter saturation voltage of 600 mV at 5mA base current and 100mA collector current. With a maximum power dissipation of 225 mW and an operating temperature range of -55°C to 150°C, the MMBT6429LT1 finds utility in consumer electronics, industrial control, and telecommunications equipment. It is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100µA, 5V |
| Frequency - Transition | 700MHz |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 225 mW |
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